Search results for "Photostimulated luminescence"
showing 10 items of 25 documents
RbBr and CsBr doped with Eu2+ as new competitive X-ray storage phosphors
2001
Abstract After X-irradiation of the alkali halides RbBr and CsBr doped with divalent Eu a significant photostimulated luminescence (PSL) effect was found. In both systems the electron trap centre is an F centre, the hole trap centre is still unknown. The Eu 2+ aggregation with cation vacancies plays an important role. Although all of the different Eu 2+ aggregates seem to show PSL effects, they have different PSL efficiencies, decay times and spectral characteristics. In the case of RbBr:Eu 2+ it was possible to investigate the different Eu 2+ -cation vacancy aggregate states by magnetic circular dichroism of the optical absorption (MCDA) and MCDA-detected electron paramagnetic resonance. I…
Oxygen-related defects and energy accumulation in aluminum nitride ceramics
2001
Abstract Features of oxygen-related defects in the AlN crystalline lattice were studied. Spectral characteristics of photoluminescence and photostimulated luminescence under the UV light irradiation of AlN ceramics were examined. The results obtained allow us to propose the mechanisms of luminescence and radiation-induced energy accumulation in AlN.
Active Media for Optical Data Processing
2002
Peculiarities of colour centre production and their recombination in photostimulated processes in doped alkali halide systems were examined in connection with their practical use as active photostimulable media in miniaturised optoelectronic and photonic devices. The specific interaction of unrelaxed H-centres and electrons with the dopants in different valence and electronic states open a way for widening the scope of multifunctional (logical and mathematical) optical data processing, including the optical chips.
Photostimulated luminescence properties of neutron image plates
2016
Abstract The luminescence properties of two commercial neutron-sensitive image-plates based on Gd 2 O 3 -doped BaFBr:Eu 2 + storage phosphors are examined. These are white Fuji plates and blue Fuji plates (BAS-ND) with Gd 2 O 3 content by weight of 34% and 50%, respectively. Both plates show two maxima in the photostimulation spectrum near 500 nm and 600 nm, with the ratio of the peak responses ( I 600 nm / I 500 nm ) 1.39 and 0.53 for the white and blue plates respectively. The optimum wavelengths for photostimulation for the two phosphors are therefore different. The response of the blue plate is only 25% that of the white plate, if each is stimulated at its optimum wavelength.
<title>Spatial correlation of latent image centers active in photostimulable luminescence of irradiated doped alkali halides</title>
2001
Changes in the photostimulated luminescence (PSL) spectrum of an electron irradiated KBr:Tl single crystal in relation to the A-luminescence spectrum upon direct activator ion excitation in the A-absorption band (AL) are found. Based on the view about the spatial correlation between F and activator hole centers, it is suggested that anion vacancy is an additional perturbing factor fot he activator (Tl+) excited (p-electron) state which is already subject to the dynamical Jahn-Teller effect. Dependences of the PSL efficiency on activator (In+) concentration in KBr:In samples irradiated by UV-light (6.30-6.45 eV), X-rays (30 keV or electrons (5.6 keV), are compared. The possible role of 6.45 …
Iron-related luminescence centers in ZnWO 4 :Fe
2002
A systematic spectroscopic study of single ZnWO4 :Fe crystals with different iron concentrations has been performed under excitation by ultraviolet light, by synchrotron radiation or under photostimulation by near-infrared light. The luminescence of Fe3+-related centres has been studied. It is shown that iron centres of different types efficiently promote the formation of crystal defects at low temperatures. Electrons and holes can be trapped near Fe2+ or Fe3+ ions, which is further revealed in phosphorescence, thermostimulated or photostimulated luminescence. At room temperature the main effect of iron impurity is to reduce the light yield of a ZnWO4 scintillator.
Possible mechanism of energy storage in optically stimulable materials: doped alkali halides
1997
Radiation-induced effects in doped alkali halides, mainly in KBr:In, are studied by the luminescence technique. The activator luminescence during a 10 s under UV-light or electron irradiation and, after it, the pulsed photostimulated luminescence on a phosphorescence background were investigated. The obtained results allow us to conclude that the main host lattice excitation relevant to both the luminescence processes mentioned above is a very mobile excitonic excitation including a photon phase and the self- trapped exciton in its composition. The photon phase, as we suppose, represents a free exciton luminescence at room temperature. In this phase, via multiple reabsorption in the low-ene…
Formation of self-trapped excitons through stimulated recombination of radiation-induced primary defects in alkali halides
1998
Abstract A self-trapped exciton formation through photostimulated recombination of an F and an H center — the exciton-created primary defect pair, is proposed and experimentally examined in alkali halides at low temperatures.
Luminescence mechanisms of oxygen-related defects in AlN
2002
Spectral characteristics of native oxygen-related defects existing in the crystalline lattice of AlN were studied. Features of photoluminescence observed under exposure to ultraviolet light together with those of the photostimulated luminescence testify the recombination character of luminescence. The mechanism of luminescence of oxygen-related defects is proposed.
Radiation defects in doped alkali halide microstructures
2000
Abstract Photostimulated luminescence (PSL) has been measured in KBr and KI systems doped with Tl and In. The size of grains in microstructures varied from 0.1 to 1.0 μm. Specifics of the photostimulated luminescence mechanisms in these systems are analysed from the viewpoint of their application in miniaturized optoelectronic and photonic devices, including optical chips.