Search results for "Photostimulated luminescence"
showing 10 items of 25 documents
<title>Spatial correlation of latent image centers active in photostimulable luminescence of irradiated doped alkali halides</title>
2001
Changes in the photostimulated luminescence (PSL) spectrum of an electron irradiated KBr:Tl single crystal in relation to the A-luminescence spectrum upon direct activator ion excitation in the A-absorption band (AL) are found. Based on the view about the spatial correlation between F and activator hole centers, it is suggested that anion vacancy is an additional perturbing factor fot he activator (Tl+) excited (p-electron) state which is already subject to the dynamical Jahn-Teller effect. Dependences of the PSL efficiency on activator (In+) concentration in KBr:In samples irradiated by UV-light (6.30-6.45 eV), X-rays (30 keV or electrons (5.6 keV), are compared. The possible role of 6.45 …
Possible mechanism of energy storage in optically stimulable materials: doped alkali halides
1997
Radiation-induced effects in doped alkali halides, mainly in KBr:In, are studied by the luminescence technique. The activator luminescence during a 10 s under UV-light or electron irradiation and, after it, the pulsed photostimulated luminescence on a phosphorescence background were investigated. The obtained results allow us to conclude that the main host lattice excitation relevant to both the luminescence processes mentioned above is a very mobile excitonic excitation including a photon phase and the self- trapped exciton in its composition. The photon phase, as we suppose, represents a free exciton luminescence at room temperature. In this phase, via multiple reabsorption in the low-ene…
Formation of self-trapped excitons through stimulated recombination of radiation-induced primary defects in alkali halides
1998
Abstract A self-trapped exciton formation through photostimulated recombination of an F and an H center — the exciton-created primary defect pair, is proposed and experimentally examined in alkali halides at low temperatures.
<title>Photostimulated recombination processes in x-irradiated CsCdF<formula><inf><roman>3</roman></inf></form…
2005
Fluoride crystals with the perovskite structure doped with rare-earth ions and other activators are interesting materials for laser hosts, scintillators, and detectors of ionizing radiation. Therefore, an actual task is to clarify the structure of the radiation-induced defects and recombination processes in these crystals. Compared to other fluoroperovskites, considerably less information is available concerning to the radiation-induced processes in the CsCdF3 crystals. We present a study of photostimulated luminescence (PSL) in the previously x-irradiated CsCdF3 crystal doped with Mn (0.05%). After the x-irradiation of the crystal, optical stimulation at 320 nm leads to the appearance of 3…
Photostimulated emission of KBr—In previously exposed to UV- or X-radiation
1995
Abstract We have performed a photostimulated luminescence (PSL) study of a KBr—In crystal previously irradiated in the exciton fundamental absorption band. It is shown that the PSL arises from three types of close defect pair. It is also shown that one of these three kinds of defect pairs is {F, In2+}, whereas the electron centre of the two other pairs has a more complex nature.
Photostimulated processes in the CsI-Tl crystal after UV irradiation
1997
The photostimulated luminescence is studied for CsI-Tl crystal after irradiation with ultraviolet light in the 80 - 300 K temperature range. The PSL creation spectrum coincides with the D absorption band at 80 K. Three bands are observed in the stimulation spectra at 80 K: 1400, 950, and 600 nm. The 1400 and 950 nm stimulation bands are presumably explained as optical transitions in the Tl 0 and V k centers situated in the spatial correlated pairs. The stimulation at 600 nm band is ascribed to the unperturbed Tl 0 centers.
Spectral Characteristics of Native Defects in BN
2002
Spectral characteristics of native defects from the crystalline lattice of c-BN were studied. It is found that the photoluminescence (PL) spectrum under exposure to ultraviolet-blue light has a complex structure containing a predominant wide 2.5 eV luminescence band at room temperature. The photostimulated luminescence (PSL) consists of a band, which is coincident with the 2.5 eV PL. The results obtained allow to conclude that the same defects are responsible for both the PL and PSL formation.
Energy transfer from colour centres to the dopant in alkali halides
1997
Abstract Energy transfer from F centres to the dopant ions in photostimulated processes is examined. It was found that in alkali halide systems the radiation defects are disposed in near vicinity of the dopants. Recombination of defects also takes place to a limited extent near the dopant with a fast and high-yield energy transfer to the latter. Role of unrelaxed H centres in the formation of donor-acceptor pairs is discussed. Some special exciton energy transfer mechanisms are analysed as well.
Luminescence properties of KNbO3 crystals
1997
Thermostimulated luminescence, X-ray-induced luminescence, photostimulated luminescence as well as the time-resolved luminescence and absorption after pulsed electron beam irradiation were studied in KNbO3 crystals at 80–400 K. A correlation between defects causing the luminescence and blue-light-induced IR absorption effects supressing the second harmonic generation efficiency in KNbO3 is discussed.
Active Media for Optical Data Processing
2002
Peculiarities of colour centre production and their recombination in photostimulated processes in doped alkali halide systems were examined in connection with their practical use as active photostimulable media in miniaturised optoelectronic and photonic devices. The specific interaction of unrelaxed H-centres and electrons with the dopants in different valence and electronic states open a way for widening the scope of multifunctional (logical and mathematical) optical data processing, including the optical chips.